CIP is a leading supplier of advanced photonic components and services in the communications, life sciences, industrial and defense market places. For nearly 30 years CIP has been at the centre of the development of photonics under the prior ownership of BT and Corning. This experience is now being applied to the prototyping and supply of advanced products and research to the benefit of customers worldwide.
Semiconductor Optical Amplifiers(SOA)
CIP’s range of SOAs are designed and optimized for Pre-Amplification, Booster Amplification, Switching and Wavelength Conversion applications. CIP’s SOAs operate in the 1550nm window
The SOA is provided in a package suitable for easy use in the lab, but may also be provided in a customer defined package or in chip-on-carrier format with specifications to be agreed.
Electroabsorption Modulator(EAM)
CIP’s range of Electroabsorption Modulators are available at both 1300nm and 1550nm (C Band), they have high optical output power, low insertion loss and low drive voltage and are available as a packaged device or as a chip on carrier.
The EAM is provided in a package suitable for easy use in the lab, but may also be provided in a customer defined package or in chip-on-carrier format with specifications to be agreed
Monolithic R-SOA-EAM
This novel device monolithically integrates a semiconductor optical amplifier with a reflective electro-absorption modulator, to combine high optical gain with high speed modulation capability. The R-SOA-EAM-1550 offers high output power, low power consumption, and low sensitivity to input polarisation, making it suitable for DWDM transmission at speeds of 10Gb/s over fiber optic links of up to 80km. The device is ‘colorless’ and a single device may be used across the entire C-band.
Optical Regenerators
The Optical Regenerator is an innovative high speed optical switch that provides all-optical wavelength conversion at data rates up to 40Gbit/s. It has applications in 2R regeneration and as an optical logic gate. The optical module is a hybrid integrated device consisting of a passive, planar silica balanced Mach-Zehnder interferometer with a twin array of non-linear SOAs.
High Speed Optical Detectors
SLEDs are designed and optimized to function as broadband light sources in applications including optical coherence tomography, life science imaging systems, fiber optic sensors and optical test instruments.
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Semiconductor Optical Amplifiers(SOA) |
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Description |
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SOA-S-OEC-1550 |
The SOA-S-OEC amplifier is a low confinement factor device optimised for high gain, low noise and high saturated output power applications. |
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SOA-L-OEC-1550 |
The Linear SOA is a low confinement factor device optimised for moderate gain, low noise and high saturated output power. |
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SOA-XN-OEC-1550 |
The ultra non-linear SOA-XN is a high confinement factor device optimised for high gain and very fast gain recovery providing very fast optical switching speeds. |
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SOA-NL-OEC-1550 |
The Non-linear SOA is a high confinement factor device optimized for high gain and fast optical recovery and hence fast switching speeds. |
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SOA-R-OEC-1550 |
The Reflective SOA is a polarisation dependent gain block with an ultra-low front facet reflectivity (<10-5). It is ideal as a gain block for external cavity lasers or other reflective device technologies. |
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SOA-RL-OEC-1550 |
The Reflective SOA is a low polarisation dependent gain version of CIP's reflective SOA. It has ultra-low front facet reflectivity (<10-5). It is ideal as a reflective colourless amplifying modulator in WDM-PON schemes and as a gain block for external cavity lasers. |
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SOA-R-OEC-1550-CO |
1.55µm fibre pigtailed TO-CAN Reflective Semiconductor Optical Amplifier (SOA)- Uncooled Operation. The SOA-R-OEC-1550-CO is a mode expanded single polarisation reflective amplifier offering high gain over an extended temperature range. It is packaged in pigtailed coaxial package based on a TO56 can and incorporating a monitor photodiode. It is ideal as a gain block sensor networks or other reflective device technologies such as uncooled transmitters in Passive Optical Networks (PONs). |
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SOA-RL-OEC-1550-CO |
1.559m fibre pigtailed TO-CAN Reflective Semiconductor Optical Amplifier (SOA) - Low Polarisation. The reflective SOA-RL is a mode expanded low polarisation reflective amplifier offering >20dB gain at 1550nm. Packaged in pigtailed coaxial package based on a TO56 can and incorporating a monitor photodiode. It is ideal as a gain block in sensor networks or other reflective device technologies such as transmitters in Passive Optical Networks (PONs). |
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SOA-RL-OEC-1550-TO |
The reflective SOA-RL is a mode expanded low polarisation reflective amplifier offering moderate to high gain. Packaged in a AR coated flat window TO56 can and incorporating a monitor photodiode, the device is suitable for use in BiDi mounted WDM PON applications up to 1.25Gb/s. The SOA-RL must be used in conjunction with a TEC to achieve performance parameters. |
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SOA-R-OEC-1550-TO |
The reflective SOA-R is a mode expanded single polarization reflective amplifier offering high gain over an extended temperature range. Packaged in a AR coated flat window TO56 can and incorporating a monitor photodiode, the device is suitable for use in BiDi mounted WDM PON applications up to 1.25Gb/s Optical. |
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Electroabsorption Modulator (EAM) |
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Part_Number |
Description |
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40G-IR-EAM-1300 |
The 40G-IR-EAM-1300 electroabsorption modulator provides high speed external optical modulation at 40Gbit/s across the 1300nm wavelength band, and is intended for use with a CW laser diode source. |
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40G-SR-EAM-1550 |
The 40G-SR-EAM-1550 electroabsorption modulator provides high speed external optical modulation at speeds of 40Gbit/s. The device operates across the 1550nm C-Band with low dispersion penalty, and is intended for use with a CW laser diode source. |
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10G-LR-EAM-1550 |
The 10G-LR-EAM-1550 electroabsorption modulator provides high speed external optical modulation at 10Gbit/s. The device operates across the 1550nm C-Band with low (<2dB) dispersion penalty over 80Km of single mode fibre, and is intended for use with a CW laser diode source. |
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60G-R-EAM-1550 |
The 60G-R-EAM-1550 provides digital optical modulation at 40 Gbit/s and RF modulation at up to the 60 GHz band. It operates across the 1550 nm C-Band with a low chirp parameter. It relies on the electroabsorption effect and is intended for use with a laser diode source. |
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R-EAM-1550 |
The R-EAM electro absorption modulator provides high speed external optical modulation at 10Gbit/s and RF modulation to 20 GHz. The device operates across the 1550nm
C-Band with low dispersion penalty. It relies on the electro absorption effect and is intended for use with a continuous wave laser diode source. EAM devices offer a compact, low drive voltage solution to optical modulation requirements and may be implemented where space requirements are at a premium. The reflective EAM is provided in a RF connectorised
package suitable for use in the lab with external RF components and drivers. It is generally intended for use with the Angled Polished Connectors (APC). |
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R-EAM-1550-LS |
The R-EAM-1550-LS is designed for 1.55µm C-band operation and features low polarisation sensitivity, low insertion loss, low drive voltage, low dispersion penalty at 10 Gbit/s over 80 km and low TEC power consumption. It is an InP device and features a high speed SMA connector in a hermetic 7 pin butterfly package. It can also function as a photodiode in duplex fibre-optic links. |
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10G-PS-EAM-1550 |
The 10G-PS-EAM-1550 is a high-speed, semiconductor device capable of generating <25ps (FWHM) temporal optical sampling windows with a repetition rate up to 10GHz. The device operates over the 1.55µm wavelength C-Band. Applications include optical pulse generation (up to 10GHz rates), 40Gbit/s to 10Gbit/s optical demultiplexing, high-speed optical sampling and microwave to optical conversion. |
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40G-PS-EAM-1550 |
The 40G-PS-EAM-1550 is a high-speed, semiconductor device capable of generating <5ps (FWHM) temporal optical sampling windows with a repetition, rate up to 40GHz. The device operates over the 1.55µm waveleng, , th C-Band. Applications include optical pulse generation (up to 40GHz rates), 160, Gbit/s to 40Gbit/s, optical demultiplexing, high-speed optical sampling and microwave to optical conversion. |
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Monolithic R-SOA-EAM, | ,
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Part_Number |
Description |
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R-SOA-EAM-1550 |
R-SOA-EAM-1550 Semiconductor Optical Amplifier (SOA) and Reflective Electroabsorption Modulator (REAM) at 1.55µm
The R-SOA-EAM-1550 is a reflective optical device that provides optical gain and high-speed optical modulation in a single monolithically integrated InP chip. The device uses an advanced MQW semiconductor structure to achieve high performance and low power requirements. Typical SOA bias currents are =100mA and the EAM is operated at a reverse bias up to –3V with ~3Vpp RF drive voltage. It has a fibre with an Angled Polished Connector (APC). |
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Optical Regenerators |
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Part_Number |
Description |
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40G-2R-ORP |
The Optical Regenerator is an innovative high speed optical switch that provides all-optical wavelength conversion at data rates up to 40Gbit/s. It has applications in 2R regeneration and as an optical logic gate. |
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40G-2R2-ORP |
Twin 40Gb/s 2R Regenerator 40G-2R2-ORP CIP’s twin optical regenerator provides the capability for 2R regeneration (Re-shaping and Re-amplifying) of de-graded data at rates of up to 40Gbits/s and is bit rate and protocol transparent. |
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40G-2R4-ORP |
CIP’s quad optical regenerator 40G-2R4-ORP provides the capability for 2R regeneration
(Re-shaping and Re-amplifying) of degraded data at rates of up to 40Gb/s and is bit rate and protocol transparent. The package houses four 40Gb/s regenerators in a similar footprint as that previously required for a single regenerator device (40G-2R-ORP) and can regenerate four independent channels simultaneously. In addition, the four regenerators can be looped back to provide cascaded two stage regeneration for 2 channels and allow the output wavelength to be the same as the input wavelength. |
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100GXN-2R2-ORP |
CIP Technologies enhanced twin optical regenerator 100GXN-2R2-ORP provides the capability for 2R regeneration (Reshaping and Re-amplifying) of degraded data at rates of 100Gbits/s and is bit rate and protocol transparent. The package houses two 100Gbit/s regenerators in the same footprint as that previously required for a single regenerator device (40G-2R-ORP) and can regenerate two independent channels simultaneously. In addition, the two regenerators can be looped back to provide cascaded two stage regeneration and allow the output wavelength to be the same as the input wavelength. |
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High Speed Optical Detectors |
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Part_Number |
Description |
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100G-HS-PD |
100G-HS-PD Photodiode for 75-110 GHz band: The 100G-HS-PD is a high speed photodiode designed for W band operation. It comes in a fibre pigtailed module with a 1mm ‘W’ connector electrical interface. There is no internal load resistor in the module, which enables the output mm-wave power to be maximised. The module is suitable for use with an external bias T. The edge coupled PiN photodiode design gives a good trade-off between high frequency operation and high responsivity, providing a useful device for laboratory applications. The chip capacitance is ~ 30 fF at –2V giving a predicted 1/(2pRC) bandwidth > 100 GHz in the absence of package parasitics and carrier lifetime effects. |
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Superluminescent Diodes (SLD) |
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Part_Number |
Description |
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SLD-LP-OEC-1310-8pin |
SLD-LP-OEC-1310-8pin The Superluminescent Diode (SLD) is a high performance wide spectrum low ripple 1.31µm semiconductor based light source.Its broad bandwidth and high power emission make it suitable for uses in a range of applications.It utilises CIP’s proprietary InP buried heterostructure design and is available in an 8-pin butterfly package with a thermistor, thermo-electric cooler and PM fibre pigtails. |
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